RF302LAM2STR
Rohm SemiconductorJapan

RF302LAM2STR

ActiveSingle DiodesSOD-128

DIODE GEN PURP 200V 3A PMDTM

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Technical parameters

Key specs

Reverse voltage200 V
Average rectified current3 A
Forward voltage920 mVMax · 3 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If920 mV @ 3 A
Environment and package
Mounting TypeSurface Mount
Operating Temperature - Junction150°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOD-128
Supplier Device PackagePMDTM
Other
Base Product NumberRF302
Capacitance @ Vr, F-
MfrRohm Semiconductor
Product StatusActive
Reverse Recovery Time (trr)25 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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