RFD16N05LSM9A
onsemi美国

RFD16N05LSM9A

在产单 FET,MOSFETTO-252AA

MOSFET N-CH 50V 16A TO252AA

沟道N 沟道
耐压50 V
连续漏极电流16 A
导通电阻47 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压50 V
连续漏极电流16 A
导通电阻47 mΩ最大 · 16A
阈值电压2 V最大 · 250mA
电源
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Power Dissipation (Max)60W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberRFD16N05
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs47mOhm @ 16A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250mA

器件图片

技术资料