Rohm SemiconductorJapan
DIODE GEN PURP 350V 10A LPDS
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View full reportTechnical parameters
Key specs
Reverse voltage350 V
Average rectified current10 A
Forward voltage1.5 VMax · 10 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 10 µA @ 350 V |
| Voltage - DC Reverse (Vr) (Max) | 350 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | - |
| Supplier Device Package | LPDS |
| Other | |
| Base Product Number | RFN10 |
| Capacitance @ Vr, F | - |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 30 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
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