Rohm SemiconductorJapan
DIODE GEN PURP 200V 1A PMDE
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current1 A
Forward voltage930 mVMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 930 mV @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 2-SMD, Flat Lead |
| Supplier Device Package | PMDE |
| Other | |
| Base Product Number | RFN1VWM2 |
| Capacitance @ Vr, F | - |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 25 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
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