onsemiUnited States
MOSFET N-CH 1000V 4.3A TO220-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current4.3 A
On-resistance3.5 ΩMax · 2.5A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Other | |
| Base Product Number | RFP4N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |