onsemiUnited States
MOSFET P-CH 50V 8A TO220-3
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage50 V
Continuous drain current8 A
On-resistance300 mΩMax · 8A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drain to Source Voltage (Vdss) | 50 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Other | |
| Base Product Number | RFP8P |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 20 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
No documents are linked to this part yet.