Rohm SemiconductorJapan
DIODE GEN PURP 650V 60A TO247GE
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current60 A
Forward voltage2.3 VMax · 60 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 60A |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 2.3 V @ 60 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C |
| Package | Tube |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247GE |
| Other | |
| Base Product Number | RFS60 |
| Capacitance @ Vr, F | - |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 55 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
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