Rohm SemiconductorJapan
IGBT TRNCH FIELD 650V 85A TO247G
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 85 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 277 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247G |
| Other | |
| Base Product Number | RGTH00 |
| Gate Charge | 94 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 54 ns |
| Series | - |
| Switching Energy | - |
| Td (on/off) @ 25°C | 39ns/143ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
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