Rohm SemiconductorJapan
IGBT TRNCH FIELD 650V 50A TO247N
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 156 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |
| Other | |
| Gate Charge | 73 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Series | - |
| Switching Energy | 390µJ (on), 430µJ (off) |
| Td (on/off) @ 25°C | 35ns/102ns |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 25A |
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