MOSFET N-CH 30V 60A LFPAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current60 A
On-resistance2.1 mΩMax · 30A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | LFPAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 10 V |
| Mfr | Renesas Electronics Corporation |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |
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