All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current40 A
On-resistance4.3 mΩMax · 20A
Power
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)40W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-WPAK
Other
Base Product NumberRJK0393
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3270 pF @ 10 V
MfrRenesas Electronics Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

Documents