Rohm SemiconductorJapan
NCH 100V 60A, HSOP8, POWER MOSFE
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current18 ~ 60 A
On-resistance8.8 mΩMax · 18A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |
| Other | |
| Base Product Number | RS1P |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF @ 50 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 18A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
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