沟道P 沟道
耐压12 V
连续漏极电流4 A
导通电阻30 mΩ
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沟道P 沟道
耐压12 V
连续漏极电流4 A
导通电阻30 mΩ最大 · 4A
阈值电压1 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Power Dissipation (Max) | 1.25W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 8-TSST |
| 其他 | |
| Base Product Number | RT1A040 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 6 V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
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