Taiwan Semiconductor CorporationТайвань, Китай
DIODE GEN PURP 1A SUB SMA
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Обратное напряжение1 kV
Средний выпрямленный ток1 A
Прямое падение напряжения1.1 VМакс. · 1 A
ТипStandardStandard Recovery >500ns，> 200mA (Io)
| Питание | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Условия эксплуатации и корпус | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Qualification | AEC-Q101 |
| Supplier Device Package | Sub SMA |
| Другое | |
| Base Product Number | S1ML |
| Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.8 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |