GeneSiC SemiconductorUnited States
DIODE GP REV 1KV 320A DO205AB
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current320 A
Forward voltage1.2 VMax · 300 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 320A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 300 A |
| Environment and package | |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction | -60°C ~ 180°C |
| Package | Bulk |
| Package / Case | DO-205AB, DO-9, Stud |
| Supplier Device Package | DO-205AB (DO-9) |
| Other | |
| Base Product Number | S320 |
| Capacitance @ Vr, F | - |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |