S3MHM6G

DIODE GEN PURP 3A DO214AB

反向耐压1 kV
平均整流电流3 A
正向压降1.15 V
类型标准

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技术参数

反向耐压1 kV
平均整流电流3 A
正向压降1.15 V最大 · 3 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.15 V @ 3 A
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 150°C
PackageTape & Reel (TR)
Package / CaseDO-214AB, SMC
QualificationAEC-Q101
Supplier Device PackageDO-214AB (SMC)
其他
Base Product NumberS3M
Capacitance @ Vr, F30pF @ 4V, 1MHz
MfrTaiwan Semiconductor Corporation
Product StatusDiscontinued at Digi-Key
Reverse Recovery Time (trr)1.5 µs
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料