DIODE GEN PURP 200V 4A TO277A
反向耐压200 V
平均整流电流4 A
正向压降1.1 V
类型标准
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反向耐压200 V
平均整流电流4 A
正向压降1.1 V最大 · 4 A
类型标准Standard Recovery >500ns，> 200mA (Io)
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A |
| 环境与封装 | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-277A (SMPC) |
| 其他 | |
| Base Product Number | S4PD |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Active |
| Reverse Recovery Time (trr) | 2.5 µs |
| Series | eSMP® |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |