Rohm SemiconductorJapan
SICFET N-CH 650V 70A TO247-4L
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current70 A
On-resistance39 mΩMax · 27A
Gate threshold voltage5.6 VMax · 13.3mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 262W |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| Other | |
| Base Product Number | SCT3030 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
Documents
No documents are linked to this part yet.