沟道N 沟道
耐压650 V
连续漏极电流38 A
导通电阻78 mΩ
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沟道N 沟道
耐压650 V
连续漏极电流38 A
导通电阻78 mΩ最大 · 13A
阈值电压5.6 V最大 · 6.67mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 159W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Supplier Device Package | TO-263-7 |
| 其他 | |
| Base Product Number | SCT3060 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
技术资料
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