STMicroelectronicsSwitzerland
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current60 A
On-resistance52 mΩMax · 30A
Gate threshold voltage5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 389W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-247-3 |
| Supplier Device Package | HiP247™ |
| Other | |
| Base Product Number | SCTW60 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
| Mfr | STMicroelectronics |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +18V, -5V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
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