Infineon TechnologiesGermany
DIODE SIL CARB 300V 10A TO220-3
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View full reportTechnical parameters
Key specs
Reverse voltage300 V
Average rectified current10 A
Forward voltage1.7 VMax · 10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 |
| Other | |
| Base Product Number | SDP10S |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| Series | CoolSiC™+ |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |