All alternatives

View full report

Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current10 AMax
DC current gain1007.5A
Power70 WMax
Power
Current - Collector Cutoff (Max)200µA (ICBO)
Current - Collector (Ic) (Max)10 A
Power - Max70 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 7.5A, 3V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic2.5V @ 150mA, 7.5A

Documents