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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current500 mA
On-resistance850 mΩMax · 500mA
Gate threshold voltage1.2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Power Dissipation (Max)150mW (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-523
Supplier Device PackageSOT-523
Other
Base Product NumberSI1012
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs750 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 16 V
MfrMicro Commercial Co
Product StatusObsolete
Rds On (Max) @ Id, Vgs850mOhm @ 500mA, 2.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

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