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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current2.1 A
On-resistance60 mΩMax · 3.6A
Gate threshold voltage1.2 VMax · 50μA
Power
Current - Continuous Drain (Id) @ 25°C2.1A (Tj)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)200mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323
Other
Base Product NumberSI2102
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 10 V
MfrMicro Commercial Co
Product StatusObsolete
Rds On (Max) @ Id, Vgs60mOhm @ 3.6A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 50µA

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