All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current750 mA
On-resistance300 mΩMax · 500mA
Gate threshold voltage1.1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C750mA (Tj)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)150W (Tj)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-723
Supplier Device PackageSOT-723
Other
Base Product NumberSI3134
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds33 pF @ 16 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs300mOhm @ 500mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 250µA

Documents