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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage60 V
Continuous drain current1.6 A
On-resistance160 mΩMax · 1.5A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.5W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
Base Product NumberSI5618
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 30 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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