SIL08N02-TP

在产单 FET,MOSFETSOT-23-6L

N-CHANNEL MOSFET,SOT23-6L

沟道N 沟道
耐压20 V
连续漏极电流8 A
导通电阻17 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压20 V
连续漏极电流8 A
导通电阻17 mΩ最大 · 5A
阈值电压1 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.5W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L
其他
Base Product NumberSIL08N02
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs17mOhm @ 5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

技术资料