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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage75 V
Continuous drain current100 A
On-resistance8 mΩMax · 50A
Power
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drain to Source Voltage (Vdss)75 V
Power Dissipation (Max)90W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-
PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageSMP-FD
Other
Base Product NumberSMP3003
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13400 pF @ 20 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs8mOhm @ 50A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-

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