Infineon TechnologiesGermany
MOSFET N-CH 600V 3.2A TO251-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current3.2 A
On-resistance1.4 ΩMax · 2A
Gate threshold voltage3.9 VMax · 135μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 38W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | PG-TO251-3-11 |
| Other | |
| Base Product Number | SPS03N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |