MOSFET P-CH 60V 8.83A TO251-3
沟道P 沟道
耐压60 V
连续漏极电流8.83 A
导通电阻300 mΩ
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沟道P 沟道
耐压60 V
连续漏极电流8.83 A
导通电阻300 mΩ最大 · 6.2A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.83A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 42W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | PG-TO251-3 |
| 其他 | |
| Base Product Number | SPU08P |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |