SPW24N60CFDFKSA1

Not For New DesignsSingle FETs, MOSFETsPG-TO247-3-1

MOSFET N-CH 650V 21.7A TO247-3

All alternatives

ChannelN-channel

Drain-source voltage650 V

Continuous drain current21.7 A

On-resistance185 mΩMax · 15.4A

Gate threshold voltage5 VMax · 1.2mA

Power
Current - Continuous Drain (Id) @ 25°C	21.7A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	240W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-1
Other
Base Product Number	SPW24N60
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3160 pF @ 25 V
Mfr	Infineon Technologies
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	185mOhm @ 15.4A, 10V
Series	CoolMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 1.2mA