Vishay SiliconixUnited States
P-CHANNEL 40-V (D-S) 175C MOSFET
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current60 A
On-resistance7 mΩMax · 10A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 68W (Tc) |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | PowerPAK® SO-8 |
| Qualification | AEC-Q101 |
| Supplier Device Package | PowerPAK® SO-8 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |