Taiwan Semiconductor CorporationTaiwan, China
DIODE SCHOTTKY 20V 1A SUB SMA
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View full reportTechnical parameters
Key specs
Reverse voltage20 V
Average rectified current1 A
Forward voltage450 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 400 µA @ 20 V |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 450 mV @ 1 A |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Qualification | AEC-Q101 |
| Supplier Device Package | Sub SMA |
| Other | |
| Base Product Number | SS12 |
| Capacitance @ Vr, F | - |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |