Fairchild SemiconductorUnited States
SMALL SIGNAL BIPOLAR TRANSISTOR,
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage25 V
Collector current1.5 AMax
DC current gain160100mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1.5 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Other | |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |