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Technical parameters

Key specs

TypePNP
Collector-emitter voltage25 V
Collector current1.5 AMax
DC current gain120100mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1.5 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberSS8550
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 80mA, 800mA

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