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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current100 mAMax
DC current gain2001mA
Power450 mWMax
Power
Current - Collector Cutoff (Max)500nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max450 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 5V
Frequency - Transition270MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
MfrFairchild Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA

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