MOSFET, P-CH, SINGLE, -3.8A, -30
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current3.8 A
On-resistance75 mΩMax · 3A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.56W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 15 V |
| Mfr | Good-Ark Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |