MOSFET P-CH 30V 100MA SSM
沟道P 沟道
耐压30 V
连续漏极电流100 mA
导通电阻12 Ω
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沟道P 沟道
耐压30 V
连续漏极电流100 mA
导通电阻12 Ω最大 · 10mA
阈值电压1.7 V最大 · 100μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Power Dissipation (Max) | 100mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SC-75, SOT-416 |
| Supplier Device Package | SSM |
| 其他 | |
| Base Product Number | SSM3J15 |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.7V @ 100µA |