MOSFET P-CH 20V 6A SOT23F
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Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current6 A
On-resistance22.1 mΩMax · 6A
Gate threshold voltage1 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Power Dissipation (Max) | 1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-23-3 Flat Leads |
| Supplier Device Package | SOT-23F |
| Other | |
| Base Product Number | SSM3J358 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38.5 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1331 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 6A, 8V |
| Series | U-MOSVII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
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