MOSFET P-CH 20V 250MA CST3C
沟道P 沟道
耐压20 V
连续漏极电流250 mA
导通电阻1.4 Ω
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沟道P 沟道
耐压20 V
连续漏极电流250 mA
导通电阻1.4 Ω最大 · 150mA
阈值电压1 V最大 · 100μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | CST3C |
| 其他 | |
| Base Product Number | SSM3J35 |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 42 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 150mA, 4.5V |
| Series | U-MOSVII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |