MOSFET P-CH 20V 1.4A CST3
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current1.4 A
On-resistance390 mΩMax · 800mA
Gate threshold voltage1 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | CST3 |
| Other | |
| Base Product Number | SSM3J56 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 800mA, 4.5V |
| Series | U-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
Documents
No documents are linked to this part yet.