MOSFET N-CH 20V 250MA VESM
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current250 mA
On-resistance1.1 ΩMax · 150mA
Gate threshold voltage1 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Other | |
| Base Product Number | SSM3K35 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V |
| Series | U-MOSIII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |