MOSFET N-CH 60V 200MA SC59
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current200 mA
On-resistance2.1 ΩMax · 500mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 200mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59 |
| Other | |
| Base Product Number | SSM3K7002 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 17 pF @ 25 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| Series | U-MOSIV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | - |