MOSFET N-CH 20V 500MA CST4
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Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current500 mA
On-resistance205 mΩMax · 250mA
Gate threshold voltage1.1 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Power Dissipation (Max) | 400mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Supplier Device Package | CST4 (1.2x0.8) |
| Other | |
| Base Product Number | SSM4K27 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 250mA, 4V |
| Series | U-MOSIII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 1mA |
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