MOSFET N/P-CH 30V 0.4A/0.2A US6
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400mA, 200mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 300mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Other | |
| Base Product Number | SSM6L09 |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 200MA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
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