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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drain to Source Voltage (Vdss)20V
Power - Max150mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
Other
Base Product NumberSSM6P35
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds42pF @ 10V
MfrToshiba Semiconductor and Storage
Product StatusActive
Rds On (Max) @ Id, Vgs1.4Ohm @ 150mA, 4.5V
SeriesU-MOSVII
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 100µA

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