MOSFET 2P-CH 20V 0.1A ES6
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 150mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Other | |
| Base Product Number | SSM6P35 |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 12.2pF @ 3V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 50mA, 4V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |