STB26NM60N

STB26NM60N

在产单 FET,MOSFETD²PAK

MOSFET N-CH 600V 20A D2PAK

沟道N 沟道
耐压600 V
连续漏极电流20 A
导通电阻165 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压600 V
连续漏极电流20 A
导通电阻165 mΩ最大 · 10A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)140W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
其他
Base Product NumberSTB26
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
SeriesMDmesh™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料