STMicroelectronicsSwitzerland
MOSFET N-CH 620V 2.2A TO263
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage620 V
Continuous drain current2.2 A
On-resistance3.6 ΩMax · 1.1A
Gate threshold voltage4.5 VMax · 50μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) |
| Other | |
| Base Product Number | STB2N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 50 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.1A, 10V |
| Series | SuperMESH3™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |