STB6NK60Z-1
STMicroelectronicsSwitzerland

STB6NK60Z-1

Not For New DesignsSingle FETs, MOSFETsTO-262-3 Long Leads

MOSFET N-CH 600V 6A I2PAK

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current6 A
On-resistance1.2 ΩMax · 3A
Gate threshold voltage4.5 VMax · 100μA
Power
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)110W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK
Other
Base Product NumberSTB6NK60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds905 pF @ 25 V
MfrSTMicroelectronics
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 100µA

Documents

DatasheetDatasheet · 440.8 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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